TY - GEN
T1 - Joint rewriting and error correction in write-once memories
AU - Jiang, Anxiao Andrew
AU - Li, Yue
AU - Gad, Eyal En
AU - Langberg, Michael
AU - Bruck, Jehoshua
PY - 2013
Y1 - 2013
N2 - Both rewriting and error correction are important technologies for non-volatile memories, especially flash memories. However, coding schemes that combine them have been limited. This paper presents a new coding scheme that combines rewriting and error correction for the write-once memory model. Its construction is based on polar codes, and it supports any number of rewrites and corrects a substantial number of errors. The code is analyzed for the binary symmetric channel, and experimental results verify its performance. The results can be extended to multi-level cells and more general noise models.
AB - Both rewriting and error correction are important technologies for non-volatile memories, especially flash memories. However, coding schemes that combine them have been limited. This paper presents a new coding scheme that combines rewriting and error correction for the write-once memory model. Its construction is based on polar codes, and it supports any number of rewrites and corrects a substantial number of errors. The code is analyzed for the binary symmetric channel, and experimental results verify its performance. The results can be extended to multi-level cells and more general noise models.
UR - http://www.scopus.com/inward/record.url?scp=84890398844&partnerID=8YFLogxK
U2 - 10.1109/ISIT.2013.6620390
DO - 10.1109/ISIT.2013.6620390
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AN - SCOPUS:84890398844
SN - 9781479904464
T3 - IEEE International Symposium on Information Theory - Proceedings
SP - 1067
EP - 1071
BT - 2013 IEEE International Symposium on Information Theory, ISIT 2013
T2 - 2013 IEEE International Symposium on Information Theory, ISIT 2013
Y2 - 7 July 2013 through 12 July 2013
ER -