TY - JOUR
T1 - Kinetic Analysis of the New Sensitization Effect in the TL of Silica Optical Fibres
AU - Kirsh, Y.
AU - Townsend, J. E.
AU - Townsend, P. D.
PY - 1989/8/16
Y1 - 1989/8/16
N2 - The kinetic parameters of the thermoluminescence induced by X‐irradiation in Ge‐silica optical fibres doped with Nd, are investigated. Initially the emission spectrum consists mainly of a band near 400 nm. The combined effect of irradiation and heating generates a new band, near 520 nm. The kinetic analysis shows that besides the broad distribution of activation energies which is typical of the amorphous silica, several monocnergetic traps are active as well. The shallower trap can be linked to the well known “110 °C peak” of quartz. It is suggested that the recombination of electrons with O 2− hole centres produce the 400 nm emission while the 520 nm band is associated with a Nd3+ hole centre. Ge4+ is assumed to be the dominant electron trap.
AB - The kinetic parameters of the thermoluminescence induced by X‐irradiation in Ge‐silica optical fibres doped with Nd, are investigated. Initially the emission spectrum consists mainly of a band near 400 nm. The combined effect of irradiation and heating generates a new band, near 520 nm. The kinetic analysis shows that besides the broad distribution of activation energies which is typical of the amorphous silica, several monocnergetic traps are active as well. The shallower trap can be linked to the well known “110 °C peak” of quartz. It is suggested that the recombination of electrons with O 2− hole centres produce the 400 nm emission while the 520 nm band is associated with a Nd3+ hole centre. Ge4+ is assumed to be the dominant electron trap.
UR - http://www.scopus.com/inward/record.url?scp=0024717077&partnerID=8YFLogxK
U2 - 10.1002/pssa.2211140238
DO - 10.1002/pssa.2211140238
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AN - SCOPUS:0024717077
SN - 0031-8965
VL - 114
SP - 739
EP - 747
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 2
ER -