ملخص
This study presents a novel and cost-effective technique for fabricating nitrogen-doped crystalline α-Ga2O3 and β-Ga2O3 thin films under atmospheric pressure conditions through flame synthesis for the first time. We employ metal–organic ammonia (NH3)-assisted flame synthesis (MO-NAFS) in a quasi-one-dimensional trimethylgallium (TMG) doped NH3/H2/N2/O2 flat flame to achieve a one-step deposition of Ga2O3 onto c-plane α-Al2O3 substrates. We found that hydrogen (H2) addition directly impacts the crystallinity of the Ga2O3 thin film. When only NH3 is employed as the fuel, a thin-film single-crystal nitrogen-doped β-Ga2O3 was observed. Blending the NH3 with 5 % of H2 yields a single-crystal nitrogen-doped α-Ga2O3, while a further increase of H2 fraction up to 10 % results in a mixture of both α-Ga2O3 and β-Ga2O3 crystals. Remarkably, the nitrogen doping through MO-NAFS was found to persistently result in an N/O atomic ratio as high as 1.12, as determined by the XPS analysis. This approach paves the way to a simple and scalable means for producing crystalline nitrogen-doped Ga2O3 thin films with potential control of crystal phase composition through parameter adjustments.
اللغة الأصلية | الإنجليزيّة |
---|---|
رقم المقال | 132599 |
دورية | Fuel |
مستوى الصوت | 375 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | نُشِر - 1 نوفمبر 2024 |
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